دیتاشیت MJD41CRLG
مشخصات دیتاشیت
| نام دیتاشیت |
MJD41C, MJD42C
|
| حجم فایل |
86.054
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJD41CRLG
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
6A
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Power Dissipation (Pd):
1.75W
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Transition Frequency (fT):
3MHz
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DC Current Gain (hFE@Ic,Vce):
15@3A,4V
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Collector Cut-Off Current (Icbo):
50uA
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Collector-Emitter Breakdown Voltage (Vceo):
100V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1.5V@6A,600mA
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Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
6A
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Voltage - Collector Emitter Breakdown (Max):
100V
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Vce Saturation (Max) @ Ib, Ic:
1.5V @ 600mA, 6A
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Current - Collector Cutoff (Max):
50µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 3A, 4V
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Power - Max:
1.75W
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Frequency - Transition:
3MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Supplier Device Package:
DPAK
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Base Part Number:
MJD41
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detail:
Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Surface Mount DPAK
